Description
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.
1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1)2, but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard.
Product Details
- Published:
- 12/01/2016
- Number of Pages:
- 7
- File Size:
- 1 file , 360 KB
- Redline File Size:
- 2 files , 520 KB
- Note:
- This product is unavailable in Russia, Ukraine, Belarus
