Description
1.1 This test method covers the measurement of steady-state primary photocurrent, Ipp, generated in semiconductor devices when these devices are exposed to ionizing radiation. These procedures are intended for the measurement of photocurrents greater than 10−9 A·s/Gy(Si or Ge), in cases for which the relaxation time of the device being measured is less than 25 % of the pulse width of the ionizing source. The validity of these procedures for ionizing dose rates as great as 108Gy(Si or Ge)/s has been established. The procedures may be used for measurements at dose rates as great as 1010Gy(Si or Ge)/s; however, extra care must be taken. Above 108Gy/s, the package response may dominate the device response for any device. Additional precautions are also required when measuring photocurrents of 10−9 A·s/Gy(Si or Ge) or lower.
Product Details
- Published:
- 03/01/2018
- Number of Pages:
- 7
- File Size:
- 1 file , 380 KB
- Redline File Size:
- 2 files , 560 KB
- Note:
- This product is unavailable in Russia, Ukraine, Belarus
