Description
1.1 This test method covers the evaluation of the oxidation resistance of silicon carbide refractories at elevated temperatures in an atmosphere of steam. The steam is used to accelerate the test. Oxidation resistance is the ability of the silicon carbide (SiC) in the refractory to resist conversion to silicon dioxide (SiO2) and its attendant crystalline growth.
Product Details
- Published:
- 06/01/2016
- Number of Pages:
- 2
- File Size:
- 1 file , 61 KB
- Note:
- This product is unavailable in Russia, Ukraine, Belarus
